The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes

The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes

Blog Article

In order to reduce the internal optical Home Decor loss of InGaN laser diodes, an unintentionally doped GaN (u-GaN) interlayer is inserted between InGaN/GaN multiple quantum well active region and Al0.2Ga0.8N electron blocking layer.

The thickness design of u-GaN interlayer matching up with background doping level for improving laser performance is studied.It is found that a suitably chosen u-GaN interlayer can well modulate the optical absorption loss and optical confinement factor.However, if the value of background doping concentration of u-GaN interlayer is too large, the output light power may decrease.

The analysis of energy band diagram of a LD structure with 100 nm u-GaN interlayer shows that the width of n-side split-reins-full-double-stitched-5-8 depletion region decreases when the background concentration increases, and may become even too small to cover whole MQW, resulting in a serious decrease of the output light power.It means that a suitable interlayer thickness design matching with the background doping level of u-GaN interlayer is significant for InGaN-based laser diodes.