The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes
In order to reduce the internal optical Home Decor loss of InGaN laser diodes, an unintentionally doped GaN (u-GaN) interlayer is inserted between InGaN/GaN multiple quantum well active region and Al0.2Ga0.8N electron blocking layer.The thickness design of u-GaN interlayer matching up with background doping level for improving laser performance is